| PART |
Description |
Maker |
| DTD743EE09 |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD713ZE09 DTD713ZETL |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| CPH3101-TL-E |
Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single CPH3
|
ON Semiconductor
|
| 30C02MH-TL-E |
Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single MCPH3
|
ON Semiconductor
|
| 30A02MH-TL-E |
Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| CPH3115 EN6344C CPH3215 CPH3215-TL-E CPH3215-TL-H |
Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3
|
ON Semiconductor
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS20500UW3T2G |
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
|
